三星宣布推出V10 BV-NAND用于AI存储
三星半导体宣布推出V10 BV-NAND，这是一种新的存储技术，可突破400层，推动人工智能存储容量和性能的边界。
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证据
- SSamsung Semiconductor News公司披露2026-08-31 17:00
V10 BV-NAND combines an ultra-high-density architecture of more than 400 layers with higher performance and improved power efficiency, opening up new possibilities for storage in the AI era. Recognized with the FMS 2026 3D & NAND Innovation Award for its technological advancemen…
- SSamsung Semiconductor News公司披露2026-08-31 17:00
As AI continues to advance and the volume of data that needs to be processed grows exponentially, storage solutions are being called upon to deliver greater capacity, higher performance, and improved power efficiency. Against this backdrop, Samsung’s V10 BV-NAND received the 3D…