Samsung Announces V10 BV-NAND for AI Storage
Samsung Semiconductor has announced the V10 BV-NAND, a new storage technology that can exceed 400 layers, pushing the boundaries of AI storage capacity and performance.
01
Evidence
- SSamsung Semiconductor NewsCompany2026-08-31 17:00
V10 BV-NAND combines an ultra-high-density architecture of more than 400 layers with higher performance and improved power efficiency, opening up new possibilities for storage in the AI era. Recognized with the FMS 2026 3D & NAND Innovation Award for its technological advancemen…
- SSamsung Semiconductor NewsCompany2026-08-31 17:00
As AI continues to advance and the volume of data that needs to be processed grows exponentially, storage solutions are being called upon to deliver greater capacity, higher performance, and improved power efficiency. Against this backdrop, Samsung’s V10 BV-NAND received the 3D…