サムスンはAIストレージ用のV10 BV-NANDを発表しました。
サムスン・セミコンダクターは、400層を超えることができる新しいストレージ技術であるV10 BV-NANDを発表しました。これはAIストレージの容量と性能の限界を押し上げるものです。
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- SSamsung Semiconductor News企業開示2026-08-31 17:00
V10 BV-NAND combines an ultra-high-density architecture of more than 400 layers with higher performance and improved power efficiency, opening up new possibilities for storage in the AI era. Recognized with the FMS 2026 3D & NAND Innovation Award for its technological advancemen…
- SSamsung Semiconductor News企業開示2026-08-31 17:00
As AI continues to advance and the volume of data that needs to be processed grows exponentially, storage solutions are being called upon to deliver greater capacity, higher performance, and improved power efficiency. Against this backdrop, Samsung’s V10 BV-NAND received the 3D…